Listed parameters used in Si/Si/Si and Si/GaAs/GaAs DG-TFET.

Table 2: Listed parameters used in Si/Si/Si and Si/GaAs/GaAs DG-TFET.

Parameter	Materials
Parameter	Si	GaAs
Energy Gap E_G (eV)	1.12	1.43
Effective electron mass m_e	0.12	0.067
Effective hole mass m_p	0.17	0.45
Mobility of electron µ_n (cm².V^-1s^-1)	8500	1345
Mobility of hole µ_p (cm².V^-1s^-1)	400	458