Table 1: Design Parameters for Simulation double gate TFET.
Parameters |
Nomenclature |
Numerical value |
fM |
Work function (eV) |
5.2 |
NS |
Doping levels for source (cm-3) |
1.1 × 020 |
ND |
Doping level for Drain (cm-3) |
5.1 × 018 |
NC |
Doping level for channel (cm-3) |
1015 |
tox |
Gate oxide material thickness (nm) |
2.0 |
Lt |
Total length of the device (nm) |
250.0 |
Lch |
Channel length (nm) |
50.0 |
tSi |
Silicon film thickness (nm) |
10.0 |
LS/LD |
Source and drain lengths (nm) |
100.0 |