Table 5B: Evolution of variables with HYAT + ATMED CR of 25/50 μm silicon plasmas at several coordinates x (μm) and instants, including the last cell affected by the irradiation before the first non-perturbed one (2.330 g/cm3) and cells inside/outside the target on laser irradiated side, observing a heat wave propagation from the irradiated side outwards the Si target with time progression as in Figure 10.

x (μm) at 0.03 ns N1: 27.5108 N1: 24.8751 N1: 24.7083 N4: 52.5110 N4: 49.9194 N4: 49.5833
ρ (g/cm3) 1.22E - 02 2.3242 2.3299 1.22E - 02 2.2555 2.3299
Te (eV) 0.9962 2.58E - 02 2.58E - 02 1.9266 2.58E - 02 2.58E - 02
TIon (eV) 0.996 2.58E - 02 2.58E - 02 1.9257 2.58E - 02 2.58E - 02
x (μm) at 0.1 ns N1: 27.6905 N1: 24.7085 N1: 24.4583 N4: 52.7576 N4: 49.7533 N4: 49.2500
ρ (g/cm3) 1.20E - 02 2.3183 2.3299 1.14E - 02 2.2457 2.3299
Te (eV) 1.1099 2.58E - 02 2.58E - 02 2.6072 2.58E - 02 2.58E - 02
TIon (eV) 1.1097 2.58E - 02 2.58E - 02 2.6063 2.58E - 02 2.58E - 02
x (μm) at 0.6 ns N1: 30.2972 N1: 24.3966 N1: 23.6250 N4: 57.1741 N4: 49.4509 N4: 48.2499
ρ (g/cm3) 7.33E - 03 1.9305 2.3299 4.66E - 03 1.8952 2.3299
Te (eV) 1.278 2.58E - 02 2.58E - 02 3.6157 2.58E - 02 2.58E - 02
TIon (eV) 1.2778 2.58E - 02 2.58E - 02 3.6146 2.58E - 02 2.58E - 02
x (μm) at 3 ns N1: 66.4673 N1: 21.8487 N1: 20.2083 N4: 114.0613 N4: 47.1475 N4: 45.2499
ρ (g/cm3) 9.42E - 04 1.9762 2.3299 5.25E - 04 1.9694 2.3299
Te (eV) 3.624 2.58E - 02 2.58E - 02 17.1967 2.58E - 02 2.58E - 02
TIon (eV) 3.594 2.58E - 02 2.58E - 02 17.2004 2.58E - 02 2.58E - 02
x (μm) at 6 ns N1: 128.2621 N1: 19.2237 N1: 16.9583 N4: 430.8407 N4: 44.1979 N4: 38.5832
ρ (g/cm3) 3.61E - 04 1.9764 2.3299 1.29E - 04 1.9649 2.3301
Te (eV) 38.8305 2.58E - 02 2.58E - 02 368.8628 2.58E - 02 2.58E - 02
TIon (eV) 38.7025 2.58E - 02 2.58E - 02 368.8627 2.58E - 02 2.58E - 02