Table 4: Rates out/into all energy levels (Σ Pnlj) of silicon plasmas proposed in the Workshop NLTE-10, considering for photoionized plasmas as electronic temperature Te = 30 eV.
| Rate out (s-1) Σ Pnlj | Si 0 cm Te = 33 & TR = 0 1E + 19 cm-3 | Si 1.2 cm Te = 30 & TR = 0 1E + 19 cm-3 | Si 1P 0.1 cm TR = 63 1E + 19 cm-3 | Si 3P 0.1 cm TR = 48 + 92 + 170 1E + 19 cm-3 | Si 1P 0.1 cm TR = 63 3E + 19 cm-3 | Si 1P 1.2 cm TR = 63 3E + 19 cm-3 | Si 3P 1.2 cm TR = 48 + 92 + 170 3E + 19 cm-3 |
| PHE/PHD | 0.00E + 00 | 0.00E + 00 | 2.24E + 14 | 1.63E + 14 | 2.16E + 14 | 2.23E + 14 | 7.07E + 13 |
| SE | 8.27E + 11 | 2.85E + 09 | * | * | * | * | * |
| AU/DC | 3.72E + 15 | 3.82E + 15 | 4.91E + 13 | 5.76E + 13 | 1.31E + 14 | 1.47E + 14 | 1.81E + 15 |
| CE/CD | 4.08E + 15 | 4.20E + 15 | 9.27E + 14 | 9.32E + 14 | 2.40E + 15 | 2.41E + 15 | 2.66E + 15 |
| CION | 2.71E + 13 | 2.70E + 13 | 8.98E + 10 | 9.20E + 10 | 2.95E + 11 | 3.01E + 11 | 7.81E + 11 |
| PHI | 0.00E + 00 | 0.00E + 00 | 1.44E + 10 | 7.74E + 09 | 5.89E + 10 | 1.93E + 11 | 2.19E + 11 |
| Rate Into (s-1) | |||||||
| PHE/PHD | 0.00E + 00 | 0.00E + 00 | 1.33E + 13 | 1.69E + 13 | 3.35E + 13 | 3.70E + 13 | 2.05E + 14 |
| SE | 7.31E + 14 | 7.31E + 14 | * | * | * | * | * |
| AU/DC | 5.59E + 15 | 5.63E + 15 | 5.11E + 11 | 8.35E + 11 | 3.40E + 12 | 4.18E + 12 | 1.75E + 14 |
| CE/CD | 1.96E + 13 | 2.01E + 13 | 5.64E + 10 | 7.20E + 10 | 4.44E + 11 | 5.00E + 11 | 2.45E + 12 |
| 3B-CREC | 3.18E + 08 | 3.70E + 08 | 7.22E + 06 | 7.40E + 06 | 6.78E + 07 | 6.86E + 07 | 1.11E + 08 |
| PHR | 0.00E + 00 | 0.00E + 00 | 1.05E + 19 | 4.97E + 29 | 1.91E + 20 | 2.01E + 21 | 1.97E + 31 |
PHE/PHD: Photoexcitation/Photodeexcitation; SE: Spontaneous Emission; *: Spontaneous Emission included with stimulated emission in PHE/PHD; AU/DC: Autoionization/Dielectronic Capture; CE/CD: Collisional excitation/Collisional deexcitation; CION/3B-CREC: Collisional ionization/three body recombination; PHI/PHR: Photoionization/Photorecombination.